FDN342P
Manufacturer:
On Semiconductor
Mfr.Part #:
FDN342P
Datasheet:
Description:
MOSFETs TO-236-3 SMD/SMT P-Channel number of channels:1 500 mW -20 V Continuous Drain Current (ID):2 A 9 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 2.92 mm |
| Width | 1.4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 80 mΩ |
| Height | 940 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | -2 A |
| Max Power Dissipation | 500 mW |
| Power Dissipation | 500 mW |
| Threshold Voltage | 1.05 V |
| Number of Channels | 1 |
| Input capacitance | 635 pF |
| Continuous Drain Current (ID) | 2 A |
| Rds On Max | 80 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 20 ns |
| Turn-Off Delay Time | 9 ns |
| Element Configuration | Single |
| Fall Time | 8 ns |
| Rise Time | 8 ns |
| Dual Supply Voltage | 20 V |
| Gate Charge | 9 nC |
| Drain to Source Resistance | 62 mΩ |
| Nominal Vgs | 1.05 V |
| Gate to Source Voltage (Vgs) | 12 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1.5 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 3071
Distributors
pcbx
pcbxUnit Price$0.56340
Ext.Price$0.56340
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.56340 | $0.56340 |
| 10 | $0.35137 | $3.51370 |
| 50 | $0.28267 | $14.13350 |
| 100 | $0.22741 | $22.74100 |
| 500 | $0.17526 | $87.63000 |
| 1000 | $0.15730 | $157.30000 |
| 3000 | $0.13936 | $418.08000 |
| 5000 | $0.12301 | $615.05000 |
| 10000 | $0.10857 | $1085.70000 |